MATERIALS TRANSACTIONS
Online ISSN : 1347-5320
Print ISSN : 1345-9678
ISSN-L : 1345-9678
Indium Tin Oxide Films with Low Resistivity at Room Temperature Using DC Magnetron Sputtering with Grid Electrode
Ho-Nyun LeeJin-Young HurHyun Jong KimMin Hyung LeeHong Kee Lee
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JOURNALS FREE ACCESS Advance online publication

Article ID: M2013316

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Abstract

Indium tin oxide films were deposited at room temperature using a direct current magnetron sputtering system with a grid electrode. The glow discharge was confined between the target and the grid by inserting a grid electrode between the target and substrate of a conventional sputtering system. Next, various characterizations of indium tin oxide films were conducted including crystallinity, electrical properties, surface concentration, optical transmittance, and surface roughness. A negative grid voltage changed or decreased the crystallinity of the films. Moreover, suppressing the diffusion of the glow discharge by applying a negative grid voltage was highly effective in decreasing the resistivity of the indium tin oxide film by increasing the carrier concentration and mobility at room temperature.

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© 2014 The Japan Institute of Metals and Materials
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