Article ID: MC200920
In this study we investigated YSZ thin film deposition from an aqueous solution by applying constant electrical field and the effect of a pulsed electrical field upon the growth condition of films. The precursor was an aqueous solution of Zr(NO2)3-2H2O, Y(NO3)3-6H2O, and 0.5 vol% NH3(aq). The thin film was deposited on the minus electrode side of the glass substrate, which was placed above the minus electrode with a gap distance of 48–530 μm. By applying the electrical field, the thin film was effectively deposited on glass substrates under an applied voltage of 2.5 V for 300 s at room temperature. The as-deposited film was amorphous, and a crystalline phase with a transparent and smooth surface can be obtained after annealing at 773 K for 3 h in air. When a pulse bias is applied to the electrical field, the film thickness, surface defects, and roughness were changed with the frequency. At 2 Hz, the film was fabricated effectively, and a thick film was obtained, but films with smoother and fewer defect surfaces were obtained in a range of about 10–100 Hz.
