硫化法によるAg-Sn-S 薄膜の作製

抄録

Abstract In this work, Ag-Sn-S thin films were deposited on glass substrates by vacuum deposition method at Ag, Sn or SnS powder. The results of crystalline structure major peaks were confirmed in the obtained crystal structure of Ag8SnS6 crystal and Ag2SnS3 crystal. In addition, possible to confirm the light absorption coefficient of about 104 cm-1 over for all the films. morphological observation, the surface of the round granular shape changed to an elongated shape as the sulfurization temperature increased, and the film became coarse after 500 °C. It was also found that voids can be reduced by using SnS for the sample. It was found that the transmittance gradually decreased as the wavelength became shorter, and the transmittance sharply decreased near the wavelength of 1000 nm. It was found that the band gap is about 1.1 to 1.34 eV close to the ideal band gap of 1.4 eV of the solar cell. Keywords [ Ag-Sn-S thin film , Sulfurization method ]