Journal of the Magnetics Society of Japan
Online ISSN : 1882-2932
Print ISSN : 1882-2924
計測・高周波デバイス
非常に狭い強磁性共鳴線幅を有するCoFeSiO/SiO2積層グラニュラー磁性膜を用いたダブルスパイラル構造インダクタ
池田 賢司鈴木 利昌丸山 誠礼峯村 知剛曽根原 誠佐藤 敏郎
著者情報
ジャーナル オープンアクセス

34 巻 (2010) 2 号 p. 123-130

詳細
PDFをダウンロード (845K) 発行機関連絡先
抄録

  In order to realize the integrated magnetic thin film devices, RF inductors have been fabricated using CoFeSiO/SiO2 multilayer granular film and copper spiral coil. Multilayer granular magnetic films which consist of alternate stacks of nano-sized granular and insulator layers exhibit very sharp ferromagnetic resonant (FMR) peak. Granular and insulator layers of 6 nm and 1 nm are suitable for obtaining a very narrow FMR linewidth. High-resolution transmission electron microscopy (HR-TEM) observation revealed a well-defined multilayer granular structure and a homogeneous CoFe grain size, which seem to be necessary for realizing a very narrow FMR linewidth. There is no thermal deterioration in frequency dependence of permeability of CoFeSiO/SiO2 films at the temperature range below 350°C. The fabricated inductor had a size of about 670 × 670 μm2, including a 3μm thick copper spiral coil, and a magnetic film with three different thicknesses of 100 nm, 200 nm and 500 nm. The slit patterned magnetic film and the division of conductor line are appeared to be useful for reducing a loss resistance of fabricated inductors.

著者関連情報
© 2010 (社)日本磁気学会
前の記事 次の記事
feedback
Top