Journal of the Magnetics Society of Japan
Online ISSN : 1882-2932
Print ISSN : 1882-2924
スピンエレクトロニクス
第一原理計算による超低RA(<0.5Ωμm2)トンネル接合の検討
上原 裕二古屋 篤史須永 和晋宮島 豊生金井 均
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ジャーナル オープンアクセス

34 巻 (2010) 3 号 p. 311-315

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  We have investigated magnetotransport properties of magnetic tunnel junctions (MTJ) with rock-salt type ZnO(001) or MgO/ZnO(001) barriers by both calculation and experiments. The first-principles transmission calculations based on NEGF method clarifed that the MgO/ZnO barrier had coherent tunneling through Δ1 state such as a conventional MgO(001) barrier. Experimental results revealed that the MTJs with an MgO/ZnO barrier had an MR ratio of 70% at a low resistance-area(RA) product of 0.5Ωμm2. This MR ratio is almost the same as the MgO barrier or higher. The rock-salt type ZnO(001)-based MTJs seem to be suitable for application to the read magnetic heads of hard-disk drives (HDDs) with an areal recording density of over 500Gbits/in2.

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© 2010 (社)日本磁気学会
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