Diamond Synthesis Using Tubular Hot Foil Chemical Vapor Deposition

抄録

In this study, the effects of the tube temperature and gas flow rate on diamond synthesis using tubular hot foil chemical vapor deposition (CVD) were investigated. CH₄ (concentration = 1%) and H₂ were employed as the process gases. The tube was heated using resistance heating at a temperature range of 1500°C–1650°C, and the H₂ gas flow rate was varied from 500 to 1000 SCCM. The film quality decreased with increasing the gas flow rate. The deposition rate increased with the tube temperature, achieving a maximum deposition rate of 13.5 μm/h at a temperature of 1650°C and a H₂ gas flow rate of 1000 SCCM. Thus, tubular hot foil CVD can be used to obtain diamond films at deposition rates higher than 10 μm/h.