Prediction of defect formation in semiconductor crystals using a numerical and experimental approach

Abstract

The present and future demands of industrial bulk crystal growth from the melt are concentrated on improved crystal quality having a reduced number of defects. To meet these challenges, the requirements for numerical and experimental analyses with a quantitative discussion have markedly increased. One of the solutions to satisfy the requirements is to establish a numerical method that includes both continuum and quantum mechanics. This paper introduces one example of such a solution regarding the problems on a poly-type of SiC and the dislocation multiplication of Si and SiC crystals.