Oyo Buturi
Online ISSN : 2188-2290
Print ISSN : 0369-8009
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Prediction of defect formation in semiconductor crystals using a numerical and experimental approach
Koichi KAKIMOTO
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2020 Volume 89 Issue 3 Pages 132-138

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Abstract

The present and future demands of industrial bulk crystal growth from the melt are concentrated on improved crystal quality having a reduced number of defects. To meet these challenges, the requirements for numerical and experimental analyses with a quantitative discussion have markedly increased. One of the solutions to satisfy the requirements is to establish a numerical method that includes both continuum and quantum mechanics. This paper introduces one example of such a solution regarding the problems on a poly-type of SiC and the dislocation multiplication of Si and SiC crystals.

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© 2020 The Japan Society of Applied Physics
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