Quantum devices based on single photon sources in silicon carbide

Abstract

Single photon sources (SPSs) in silicon carbide (SiC), such as a silicon vacancy (V_Si), a divacancy (V_SiV_C), carbon antisite-carbon vacancy pairs (C_SiV_C), nitrogen-vacancy pairs (N_CV_Si) and a surface SPS, are regarded as candidates for quantum bits (Qubits). To apply these SPSs to quantum applications, it is important to understand their optical and spin properties. Spins in single V_Si, V_SiV_C and N_CV_Si can be manipulated using optically detected magnetic resonance techniques. C_SiV_C and a surface SPS show luminescence with extreme brightness even at room temperature. To realize quantum devices, methodologies for the introduction of SPSs into devices are also important. The creation of a V_Si in certain locations of SiC diodes without their degradation was demonstrated using a proton beam writing technique.