帯熔融法によるInSbの精製
1957 年 26 巻 11 号 p. 586-588
詳細
1957 年 26 巻 11 号 p. 586-588
An attempt is made to purify InSb by the method' of zone refining. InSb crystal, which was prepared by the reaction of 0.95% In and 99.99% Sb, is charged in a fused silica tube and evacuated. After sealing off, the silica tube is made to pass the zone 1520 times to purify the charged InSb crystal.
After such processes, it is found that the major impurities; Pb, So, Bi and Fe etc; are gathered at the tail end, and minor impurities; As and Zn; gathered at the top of the ingot. It is also found that the zone melting method is not effective to segregate the impurities such as Mg, Si and Al from InSb.
Finally, analysing the data of the impurity distribution in zone refined InSb, the values of 0.52 and 1.4 are obtained for the tentative values of the distribution constants of Pb and Zn in InSb.
