1957 年 26 巻 2 号 p. 72-76
Relations of transistor noise power with surrounding temperature are measured at 1000 cycles. The result is interesting in that a pronounced difference is observed between the noise characteristics in room temperature region and those in a lower temperature region. Reasonable explanations are given of the difference by studying separately the surface noise, the leakage noise and the diffusion noise as defined by W. H. Fonger. So experimental' verifications are made.