酸化物陰極中間層の生成

抄録

The growth of interface layer of oxide coated cathodes for about six thousand working hours is studied. The following are expected as the possible physical factors determining the rate of growth of interface layer during the life test.
(1) The rate of reaction between barium oxide and reducing agent, mainly silicon.
(2) The rate of diffusion of reacting materials (barium oxide or silicon) through the interface layer.
(3) The rate of diffusion of silicon out of the base metal.
The results of experiment indicate, that the resistance of interface layer increases linearly with the working time, therefore the rate of growth of interface layer is probably dominated by the rate of reaction between barium oxide and silicon. Hence, the interface layer does not seem to affect so much the reducing processes of BaO during at least about six thousand working hours. In addition, the dependence of the growth on the amount of reducing agents contained in base metal and the reduction of interface resistance by the current are studied.