Synthesis of CdS Single Crystal by Sublimation Method (II)

抄録

The method reported in the previous paper (I) has been revised in some points. By an improved cooling setup, a steep temperature gradient is obtained in any desired region of the furnace where the polycrystal is grown and heat-treated. The “resublimation zone” is introduced to prolong the heat treatment. Single crystals of over l cm in diameter are grown easily with sufficient reproducibility.
The chemical composition varies with the conditions of the crystal growth; the crystal grown at high temperature in H₂S contains Cd in excess of its stoichiometric value creating impurity level.
Light figures are shown in both cases of chemical and thermal etching. They give information concerning the orientations of the facets of etched pits and growth hillocks.