光導電性硫化カドミウム焼結膜
1960 年 29 巻 9 号 p. 636-641
詳細
1960 年 29 巻 9 号 p. 636-641
High sensitive and stable CdS photoconducting films on fused quartz plate are obtained. Sintered films of about 10 μ in thickness can be prepared by simultaneously adding impurities and sintering with CdCl2 as the flux. Effects of impurities on optical and electrical properties of the films are investigated. A sintered US photoconducting film with a large photocurrent (above 1 mA), a small dark current (below 1 μA) and a small time constant (about 10 m sec) was obtained by adding 0.05_??_0.1 atom % Cu in CdS and 0.2 mole CdCl2 in 1 mole CdS. Small variations of photocurrent and dark current with temperature ranging from 0°C to 80°C were observed. The sintered CdS photoconducting films had little change in photoconductivity over a period of one year.
