CdSe焼結膜の光導電特性
1962 年 31 巻 2 号 p. 124-130
詳細
1962 年 31 巻 2 号 p. 124-130
Photoconductivity of near-infrared irradiated sintered CdSe layer has been measured.
Photosensitivity of this layer is as high as that of Ge phototransistor, PbS and PbTe films etc. which are generally used for infrared work except that the peak of sensitivity of the former lies at a shorter wavelength region of 7000_??_8000Å.
Two types of samples were examined: one was of pure CdSe, the other was of Cu-activated CdSe, the activation being by 0.05 atom percentage.,
The following are some of the results obtained.
1. Photosensitivity increases with Cu density, this impurity Cu acting as recombination center.
2. Above the room temperature, the sensitivity drops with the rise of temperature.
3. In some conditions, the relation of light intensity to photocurrent is super-linear.
4. Time constant is small in comsarison with US cell.
