真空蒸着時における下地表面温度上昇と蒸着ゲルマニウム膜の抵抗の経時変化
1963 年 32 巻 1 号 p. 17-23
詳細
1963 年 32 巻 1 号 p. 17-23
Faculty of Engineering, Osaka University, Higashinoda, Miyakojima, Osaka The rise of surface temperature of a glass substrate during vacuum deposition is measured from the variation of electric conductivity of deposited germanium thin film with temperature. The temperature rise is considered to be caused by (1) the heat radiation from evaporator which, is heated at a high temperature, (2) the kinetic energy of atoms that come flying from the evapo-rator to the substrate, and (3) the heat of condensation which is generated on the film when the deposited atoms occupy the stable lattice points. Results of calculations and measurements show that, if the temperature of the evaporator is high, (1) plays the predominant role, but, if the tem-perature of the evaporator is low, (3) becomes important, and (2) is always negligible. And the increase of resistance of germanium film observed in a few minutes immediately after the deposi-tion is found attributed to the fall of film temperature.
