Ge-ZnSeヘテロジァンクション

抄録

Various semiconductor heterojunctions, such as Ge-GaAs, Ge-GaP, GaAs-GaP, Ge-Si, ZnTe-CdS, etc., have recently been developed together with progress of epitaxial growth technique. These junctions aim at special characteristics which could not been obtained by semiconductor elements. The purpose of this study is to clarify the method of preparation of Ge-ZnSe heterojunction, which is a new pair, and its electric and photoelectric characteristics. In this experiment, ZnSe was transferred from high temperature zone to low temperature zone by disproportionation reaction (ZnI₂+1/2Se₂ ZnSe+I₂) in a transparent quartz tube and epitaxially grown on p-type Ge (111) surface. The properties of this junction depend especially on the seed temperature, and by electron diffraction patterns, polarity of thermoelectric motive force, current-voltage characteristics, breakdown voltage and photoelectric sensitivity, the best preparing temperature was confirmed to be 1000_??_1050°C for ZnSe source and above 800°C for Ge seed. Furthermore, the best junctions thus prepared showed the rectifying ratio of 1000:1 at one volt and the photosensitivity of 10 mA/lm covering the region of 0.8_??_2.0 μ in wavelength.