GaAsレーザーの発光時間特性
1965 年 34 巻 9 号 p. 647-651
詳細
1965 年 34 巻 9 号 p. 647-651
With the purpose of finding the frequency limit in modulating directly a GaAs injection laser, the current dependence of time response of laser output is examined. Approximate expressions theoretically derived for the output rise and fall times show that the rise time decreases as the current increases and that, when the operational conditions are the same, the fall time is shorter than the rise time. These theoretical outcomes are in reasonable agreement with results obtained by experiment. The factors effective in improving the time response are discussed. The spontaneous radiative recombination life-time of electrons in the used GaAs diode is about 0.5 nsec.
