1969 年 38 巻 10 号 p. 937-944
Properties of electron beam evaporated SiO2 films are studied with P etch rate, infrared absorption and electrical characteristics. It is found that these properties depend mainly on the deposition rate. At a slow deposition rate, for example 100 Å/min, P etch rate is 450 Å/min, dielectric constant is 4. 15 and dielectric strength is 5.4×106 V/cm. At a fast deposition rate, for example 1000 Å/min, P etch rate increases to 1600 Å/min. After annealing at 400-800°C in oxygen atmosphere, P etch rate and infrared absorption were observed to approach those of thermally grown SiO2 films. Films annealed at 800°C were observed to have approxi-mately the same properties as those thermally grown.