1970 年 39 巻 2 号 p. 127-135
Hall effect measurement were carried out for vacuum deposited CdSe films at temperatures between -196 and 70°C. The Hall mobility increased exponentially with temperature for the CdSe films of low carrier concentration but Tn(n=1.8-2.2) dependence was observed in the case of high carrier concentration. Variations of Hall mobility, carrier concentration and electrical conductivity of CdSe films as a function of gate electric field were measured on the samples of TFT structure. The deposition temperature dependence of the Hall mobility of CdSe films was investigated and it is shown that dependence of gm of the CdSe TFT on the deposition conditions is primarily attributed to the variation of the Hall mobility of the CdSe films. X-ray diffraction and electron microscope studies on CdSe films are also described.