1970 年 39 巻 6 号 p. 527-534
Electrical properties of silicon oxide films prepared by glow discharge reaction between organic silicate and oxygen gas are reported. Properties of silicon oxide films are remarkably influenced by the reaction temperature. Silicon oxide films prepared by this process at a temperature below 200°C contain -OH and Si-OH groups from the observation of infrared absorption spectra. They have a larger dielectric constant than that of thermally grown oxide. The higher the reaction temperature is, the closer the properties of silicon oxide films are to those of thermally grown oxide. In the silicon oxide films prepared at the temperature of 300°C, the breakdown field is in the range of 5_??_10×106V/cm and the dielectric constant is 3. 6. MOM capacitor constructed by this process has a constant quality factor of about few thousand and capacitance independent of frequency up to about 10MHz.