応用物理
Online ISSN : 2188-2290
Print ISSN : 0369-8009
グロー放電により生成したSi酸化膜の電気的特性
今分 喜治奥田 昌宏吉田 洪二
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1970 年 39 巻 6 号 p. 527-534

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Electrical properties of silicon oxide films prepared by glow discharge reaction between organic silicate and oxygen gas are reported. Properties of silicon oxide films are remarkably influenced by the reaction temperature. Silicon oxide films prepared by this process at a temperature below 200°C contain -OH and Si-OH groups from the observation of infrared absorption spectra. They have a larger dielectric constant than that of thermally grown oxide. The higher the reaction temperature is, the closer the properties of silicon oxide films are to those of thermally grown oxide. In the silicon oxide films prepared at the temperature of 300°C, the breakdown field is in the range of 5_??_10×106V/cm and the dielectric constant is 3. 6. MOM capacitor constructed by this process has a constant quality factor of about few thousand and capacitance independent of frequency up to about 10MHz.

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