Cd4SiS6の光学的性質(1)発光特性
1971 年 40 巻 2 号 p. 158-162
詳細
1971 年 40 巻 2 号 p. 158-162
Photoluminescent properties of Cd4SiS6 are investigated using single crystals which are heat-treated in the atmosphere of their constituent atoms (Cd, Si, and S). As a result it is found that red and infrared emission bands in these samples are affected strongly by the Si-treatment. Nature of luminescene centers responsible for the red and infrared emissions is discussed. Furthermore, the correlation of the intensity of the red emission to that of the infrared emission is investigated, and an attempt is made to obtain adequate materials which exhibit more efficient red luminescence.
