ゲルマニウム・マイクロ波発生素子の試作および特性
1971 年 40 巻 8 号 p. 844-849
詳細
1971 年 40 巻 8 号 p. 844-849
Fabrication technologies and electrical performance of n type Germanium oscillators, 200 to 500 microns long and with carrier concentration of 1015cm-3 at 77°K are reported here. The n+-n-n+ structure was prepared by means of epitaxial solution regrowth. The observed waveform when the DC field is applied along the <100> direction is in good agreement with the result of one-dimensional computer simulation of accumulation mode operation. When the field was along <511>, <311>, <211>, <111>, <122> or <110>, no current oscillation was observed.
