チタニヤウィスカ生成におけるシリコンの影響
1971 年 40 巻 8 号 p. 870-875
詳細
1971 年 40 巻 8 号 p. 870-875
Titania whiskers 7 were grown by a vapour phase reaction from a mixture of TiCl4 and SiCl4 of various concentration. The concentration range of SiCl4 under which the whiskers .grow was about 0.015 υ/o-0.8 υ/o. The temperature range for the growth was about 450°C_??_700°C. Growth rate, feature of aggregation etc. of the whiskers varied with the concentration of SiCl4. For instances, the growth rate at 620°C was about 3 μ/h at the concentration of 0.015 υ/o, 250 μ/h at 0.28 υ/o and 2 μ/h at 0.8 υ/o. Silica deposited from the vapour was guessed to be of amorphous phase.
