グロー放電反応により生成したSiO2膜を有するMOSダイオード
1972 年 41 巻 11 号 p. 1207-1213
詳細
1972 年 41 巻 11 号 p. 1207-1213
C-V characteristics of MOS diode with SiO2 film by glow discharge reaction between organic silicate and oxygen gas are reported. C-V characteristics of MOS diode with SiO2 film prepared by glow discharge reaction alone, depend on frequency, but show no hysteresis. Fre-quency dependence of C-V characteristics decreases and its hysteresis appears with the formation of thermally grown thin oxide on the Si surface. The hysteresis disappears with the densifica-tion of SiO2 film prepared by glow discharge reaction in a nitrogen atmosphere.
MOS diode with SiO2 film prepared by glow discharge reaction of thickness of about 2, 000 A densified in a nitrogen atmosphere at 600°C over a thermally grown SiO2 film whose thickness is about 100A shows no frequency dependence and no hysteresis in its C-V characteristics. For such a diode Nrs is about 5.5±1010 cm-2. It seems that the influence of bombardment on a Si surface by ions and electrons during the deposition of SiO2 film by glow discharge reaction is much less than that of conventional sputtering.
