アモルファス半導体メモリミシガン会議とその話題から

抄録

Reversible electrical and optical memory effects in amorphous semiconductors are reviewed. General discussions of the bistable memory and switching phenomena are given by using a transition theory in a system having two energy states. The structral phase transformation of amorphous semiconductors from the amorphous to crystallized states, and behaviors of physical properties both in the individual state are demonstrated. A model for the explanation of “light induced nucleation”, which attains lowering the transition temperature and the high speed crystallization, is discussed by the influence of an excess electron-hole pair injection.
Clear changes in the electrical and optical properties by the phase transition can be used for binary storage and read-out purpose in the information processing. Some current topics for this purpose in the application field are also introduced.