Cd₄SiS₆ の光学的性質 (2) 光伝導特性

抄録

Photoconductivity measurements are made on single crystals of Cd₄SiS₆ which are heattreated in the atmospheres of the constituent atoms (Cd, Si and S). It is found that photoconductivity is strongly affected by the deviations from stoichiometry of Si atom in Cd₄SiS₆.
From measurements of the thermally stimulated current and the effect of the superposition of infrared light on photoconductivity, the values of the electron trap depth are determined. The results obtained by the two methods agree with each other, and it is concluded that this trap is located 0.72eV below the conduction band.
This electron trap is annihilated by a heat-treatment in the Si atmosphere. Taking account of the results of transmission and reflection spectra measurements, it is inferred that this electron trap is due to a Si vacancy.