エリプソメトリによる半導体上薄膜の測定の精度と誤差
1972 年 41 巻 6 号 p. 589-596
詳細
1972 年 41 巻 6 号 p. 589-596
Accuracy and error of the ellipsometric measurements of thin films on semiconductors are described. The types of ellipsometers which are actually used in these measurements are a popular one-beam type with a polarizer and an analyser, and a split-beam type with a Wallaston prism to split the light beam at the detector system. We have investigated measurements for the thin films on semiconductors such as SiO2 on Si, Al2O3 on Si, Al2O3 on GaAs, using the two-ellipsometers, and discussed the accuracy and error of the measurements. As for the split-beam ellipsometer, the apparatus, measurement and principle are explained in detail, which have not hitherto been described elsewhere.
Finally, measurements of thin films on GaAs by the split-beam type, the data of which are at present considered new in this technology, are demonstrated as examples of application to semiconductors.
