応用物理
Online ISSN : 2188-2290
Print ISSN : 0369-8009
ISSN-L : 0369-8009
直流スパッタリングによるチタン窒化物薄膜
中村 達後藤 俊成山中 惣之助
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1973 年 42 巻 5 号 p. 491-497

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The specific resistivity, temperature coefficient of resistance, superconducting transition temperature and structure of thin films of both titanium and titanium nitride were studied respectively.
The films were deposited on the glass substrates by reactive sputtering. At partial nitro-gen pressure of 4×10-4 Torr, temperature coefficient of resistance attained a minimum value of 70 ppm/°C, where a mixture of Ti and Ti2N was formed. At 1×10-3 Torr, specific resistivity attained a maximum value of 520 μΩcm, where TiN was formed. The superecondu-cting transition temperature was found to be 4.4K in the range from 8×10-4 Torr to 7×10-3 Torr. At pressures higher than 1×10-3 Torr, with increasing nitrogen pressure, specific resistivity and transition temperature decreased and temperature coefficient of resistance increased.

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