半導体不揮発性メモリ
1974 年 43 巻 10 号 p. 990-1002
詳細
1974 年 43 巻 10 号 p. 990-1002
Electrically reprogrammable nonvolatile semiconductor memories are reviewed. Methods of charge injection into traps or a floating gate in insulator(s) of MIS structure are described.
Application of a nonvolatile semiconductor memory to an analogue memory or an electrically erasable optical memory for visible and infrared light pattern is investigated.
