拡散型半導体ひずみゲージ
1974 年 43 巻 4 号 p. 324-329
詳細
1974 年 43 巻 4 号 p. 324-329
Some properties of the stress-sensitive piezoresistive regions formed by the selective diffu-sion of p-type impurities into silicon have been theoretically and experimentally investigated.
Gage-factor of the diffused layer is dependent on surface impurity concentration but is independent of layer thickness.
The results were applied to a transducer with a single-crystal silicon diaphragm having pressure-sensitive piezoresistive regions.
