Narrow Gap半導体の結晶成長-Pb1-xSnxTeおよびHg1-xCdxTeを中心として
1974 年 43 巻 6 号 p. 562-576
詳細
1974 年 43 巻 6 号 p. 562-576
Crystal growth of Pb1-xSnxTe and Hg1-xCdxTe of most interesting narrow gap semi-conductors are reviewed. Problems arising in growth of the crystals, especially with an energy gap of about 0.1 eV, are pointed out and various methods are discussed to solve them.
Differences in advantages between growth methods generally used are also shown, containing Bridgeman, Czochoralski, vapor transport, liquid epitaxial and vacuum evaporation growth techniques.
