シリコン反転層中における電子伝導と表面量子化

抄録

Studies on carrier transport phenomena in silicon inversion layers are reviewed with a special emphasis on surface quantization (SQ) and scattering of electrons. Various models to describe extended and localized eigenstates of electrons are presented both for homogeneous and inhomogeneous inversion layers. Experimental evidences of surface quantization are summarized to clarify the importance and natures of SQ over a wide range of temperature and surface band bending. Theories of electron scatterings by phonons, ionized impurities, surface roughness, rigid cores, etc, are described and compared with transport data to estimate dominant scatterers under various experimental conditions. Problems yet unsolved are pointed out and proposals of new electronic devices based on SQ are given to encourage future studies.