応用物理
Online ISSN : 2188-2290
Print ISSN : 0369-8009
ISSN-L : 0369-8009
n型Si上への陽極反応膜の生成
坂本 充鴨志田 元孝
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1975 年 44 巻 5 号 p. 497-506

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An experimental study has been made of the anodic. reaction of silicon in 49% HF solution with emphasis on n-type in order to form the anodic film. Current-voltage characteristics, the effective dissolution valence, and the effect of illumination during the anodization have been determined for n-, and n+-samples. Moreover the relation between anode potential and the anodization, and the results of infrared spectrum, electron diffraction, and specific gravity of the anodic film are discussed. The discussions are given on the mechanism of the formation of the anodic film, partly based on the experimental results obtained by Memming and Schwandt.

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