1977 年 46 巻 7 号 p. 690-694
A number of suitable conditions for producing stable memory elements have been found in ZnS films with Al and Cu electrodes. Annealing at about 200 (°C) in 10-5 (Tory) was found to be very effective to stabilize the memory operations. Insertion of oxide layer between Al electrode and ZnS may improve the productive rate.
Specimen exhibiting both memory operation and electroluminescence was also obtained.