1980 年 49 巻 1 号 p. 29-32
The influence of oblique deposition on the growth rate, etching rate and structure of the SiO2 thin film deposited by a planar magnet-ron sputtering method was investigated, It was found that the etching rate of the SiO2 film by NH4F-HF-CH3COOH solution in-creased rapidly with increase of the incidence angle, whereas the growth rate was almost constant in the whole range of the incidence angle examined. Furthermore, it was found that the films sputter deposited at incidence angles greater than 60 degrees were found to have a columnar grain structure.