電子ビームリソグラフィのためのソフトウエア
1980 年 49 巻 1 号 p. 61-69
詳細
1980 年 49 巻 1 号 p. 61-69
Software technologies indispensable for finer pattern generation electron beam lithography are reviewed in this paper. Corrections for electron beam deflection distortion, proximity effect and pattern distortions owing to wafer warpage and overlapped exposure are seen to be necessary.
This paper mainly addressed computing correction techniques for proximity effect and electron beam deflection distortion. The basic principles of pattern data processing are described. Proximity effect correction is also clarified, with classification into inter-proximity, or the resultant interconnection of adjacent patterns, and intra-proximity, the rounding of pattern corners. For electron beam deflection distortion correction, the inverse mapping of distortion function is solved. As pattern data manipulation techniques, arithmetic operations on polygons with flexible chain-link data-structure are conducted.
