GaP/色素/金属素子の光起電力効果
1985 年 54 巻 1 号 p. 65-68
詳細
1985 年 54 巻 1 号 p. 65-68
GaP/Chl-a/Au and GaP/Cu-Pc/Ag cells were constructed from nor ptype GaP wafers, chlorophyll-a (Chl-a) or Cu-phthalocyanine (Cu-Pc) and evaporated metal films. The n-GaP/ Chl-a/Au cell exhibited strong rectification in the dark and photovoltaic effect on steady state illumination, whereas the effects for the p-GaP/Chl-a/Au cell were weak. Since Chl-a is a p-type semiconductor, a hetero pn junction exists at the n-GaP/Chl-a interface. The GaP/Cu-Pc/Ag cells exhibited rectification in the dark due to heterojunctions at the GaP/ Cu-Pc interface, and photovoltaic effects due to both the heterojunctions and Schottky junc-tions at the Cu-Pc/Ag interfaces. The power conversion efficiency of the cells was 0.1% at its maximum.
