オージェ分光法によるCdTeの表面分析
1985 年 54 巻 8 号 p. 835-840
詳細
1985 年 54 巻 8 号 p. 835-840
Modified surface layers on the (111) Cd and (111) Te planes of the etched CdTe single crystals were investigated by the Auger electron spectroscopy method. On the surface etched by EAg-1, the surface modified layers are 10nm in thickness for the (111) Cd plane and 40nm for the (111) Te plane. On the surface etched by Br-methanol, these are 1nm and 2nm, respectively. On the other hand, the surface modified layer is thicker on the (111) Te plane than on the (111) Cd plane for a gas etching process.
