応用物理
Online ISSN : 2188-2290
Print ISSN : 0369-8009
走査型ラマン顕微鏡の試作と半導体評価への応用
溝口 幸司中島 信一井上 靖朗宮内 美智博三石 明善
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1986 年 55 巻 1 号 p. 73-80

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A scanning Raman microprobe consisting of a Raman spectrometer and a scanning microscope was constructed. Under the best condition, the focal spot size on a sample surface was 0.7μm at λ0=488nm. Two-dimensional Raman intensity profiles of CW-laser annealed polycrystalline silicon films were measured with this apparatus, and the grain size of the polycrystalline films was estimated. Moreover, the crystallographic orientations of the grains were determined from the Raman polarization measurements.

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