A novel preparation technique of thin films has been successfully developed with an extremely high deposition rate by high-density, high-temperature plasma produced by an intense pulsed ion beam (940 keV, 7kA/cm2, 30 ns). Such a beam has been irradiated onto the surface of ZnS target to produce the zinc and sulfur plasma, which expands to be deposited on the substrate. The temperature of the plasma has been evaluated to be _??_1eV under the assumption of a thermal equilibrium. We have calculated the deposition rate (instantaneous) to be _??_2.3cm/s, which exceeds five orders of magnitude higher than that of a conventional vacuum-depostion technique. From the measurement of X-ray diffraction, clear evidences have been obtained for the production of polycrystalline hexagonal-ZnS thin films. Several dependence such as deposition rate, crystal-linity, etc. has also been studied on the temperature of the substrate.
