A study on the mechanism of the occurrence of current oscillation observed in a SOGICON (Semiconductor Oscillation Generator by Injection and CONstriction) type planar device was made. Samples having n-channel region were prepared by selective thermal diffusion of phosphorus on the p-type Si substrate. For comparison, p-channel type samples were also fabricated by thermal diffusion of boron on the n-type Si substrate, the resistivity of substrates being 100 Ω•cm. By applying a pulse voltage across the specimen, oscillation waveforms were observed under various conditions. The oscillation characteristics between n-type and p-type samples were compared in order to clarify the mechanism of the occurrence of current oscillation.
