Oyo Buturi
Online ISSN : 2188-2290
Print ISSN : 0369-8009
Hot Carrier Effects in MOS Devices
Mitsumasa KOYANAGI
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Keywords: hot carrier, submicron device, MOSFET, reliability, trap, interface states, lucky electron, electron temperature
JOURNAL FREE ACCESS

1990 Volume 59 Issue 3 Pages 310-324

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[in Japanese]
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© The Japan Society of Applied Physics
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