次世代パワー半導体技術の最新動向

抄録

Silicon carbide (SiC) is very attractive semiconductor material especially for power device use because of its excellent physical properties like as high critical electric field, high thermal conductivity, and so on. In this paper, the theoretical consideration about the advantages of SiC power devices compared with that of Si and the current status of the social implementation of SiC power devices are introduced.