抄録
Ca 2 </ SUB> SiO 4 </ SUB> film in a single phase was prepared by MOCVD and was immersed in Hanks Solution up to 14 d. Apatite formed on the surface of the film after 1 d of immersion. A dense apatite layer covered the film surface after 7 d. CO 3 </ SUB> 2 - </ SUP> and PO 4 </ SUB> 3 - </ SUP> stretches were identified after 1 d by FT-IR. With increasing immersion period, the concentration of Si and Ca in Hanks solution slightly increased, whereas that of P decreased, implying the dissolution activity of Ca 2 </ SUB > SiO 4 </ SUB> film. The dissolution rate of Ca2SiO4 film was much lower in Hanks solution than that in distilled water.
