We developed NCA660 as a bottom-antireflective-coating (BARC) for 157-nm lithography last year. The NCA660 characteristics, such as the k-value, dry-etching rate, and film thickness loss, were optimized to meet the target for 157-nm lithography. In this paper, we discuss our evaluation of resist pattern profiles on BARC with various chromophores. We have found that the position of the hydroxyl group in the chromophore is the key to providing an inactive surface, which does not degrade the resist profile, and NCA660 has the optimum chemical structure in terms of the resist pattern profile. In addition, we attempted resist pattern profile control by using NCA660 with acidic additives, and confirmed that this method is quite effective. We concluded that NCA660 is the most suitable BARC for 157-nm lithography and has a wide range of application.