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Journal of Photopolymer Science and Technology
Vol. 18 (2005) No. 3 P 435-441



A resist pattern of half-pitch (hp) 50 nm, 120 nm deep was fabricated with near-field lithography (NFL) of i-line (&lamda; = 365 nm) using a positive-tone chemically amplified resist and a tri-layer resist process developed for NFL. The experimental results were in close agreement with the numerical results of electro-magnetic analysis using finite-difference time domain (FDTD) method. The possibility of fabricating sub-50 nm patterns was discussed over the numerical results.

Copyright © 2005 The Society of Photopolymer Science and Technology (SPST)

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