Extreme ultraviolet lithography (EUVL) is the preferred solution for the 32nm node. This paper reports on EUV resist screening results by EUV Interference Lithography, targeting at 32nm half pitch resolution. Progress in resist resolution, sensitivity and LER has been made. Champion results for chemically amplified resists are 30nm resolution, 3.8nm (3σ) LER and 10mJ/cm2 sensitivity. However these were not accomplished in one single resist. The performance was compared to imaging in non-chemically amplified PMMA resist showing higher resolution and improved LER (2.5nm) at the expense of photospeed. On full field scanners the resist performance might be dominated by the flare. Possible impact of flare on resist profiles has been studied through exposures on a Micro-Exposure Tool and through contrast demodulation experiments with the interference set-up. Increasing the surface inhibition in the resist is suggested as a way to cope with the higher flare levels of full field scanners.