Journal of Photopolymer Science and Technology
Online ISSN : 1349-6336
Print ISSN : 0914-9244
Carborane-Based Photoacid Generators: New Superacids For 193 nm And EUV Lithography
Ralph R. DammelM. Dalil RahmanDouglas McKenzieDavid RentkiewiczTakanori KudoMurirathna PadmanabanKarl van Werden
Author information
JOURNALS FREE ACCESS

Volume 20 (2007) Issue 5 Pages 627-635

Details
Download PDF (1381K) Contact us
Abstract

Photogenerated carborane superacids have been found to be effective as catalysts for chemically amplified resists in 193 nm and EUV. It was found unexpectedly that despite the documented high acid strength of the 1-carboranes, the photospeed of resist formulations containing them was significantly lower than that of corresponding perfluoro-substituted sulfonic acids. This behavior is attributed to the high stability of the intermediate carbocation/acid anion complex, which for perfluoroalkane sulfonates is a transition state but an isoable intermediate for the 1-carborane acids. The long residence time of the carborane acid catalyst in this intermediate reduces its availability and causes the lower photospeed; at the same time, this phenomenon leads to lower diffusion rates as a result of the immobility of the bulky intermediate complex. Coupled with the high transparency of carborane anions in EUV, it is expected that the use of carborane PAGs for EUV formulation optimization will offer new opportunities to escape the photospeed/resolution/LER triangle trade-off that has limited progress in EUV photoresists.

Information related to the author
© 2007 The Society of Photopolymer Science and Technology (SPST)
Previous article Next article

Recently visited articles
feedback
Top