Ion Beam Irradiation Effects on Resist Materials

Gowa Tomoko; Tomohiro Takahashi; Toshitaka Oka; Takashi Murakami; Akihiro Oshima; Seiichi Tagawa; Masakazu Washio

doi:10.2494/photopolymer.23.399

Gowa Tomoko, Tomohiro Takahashi, Toshitaka Oka, Takashi Murakami, Akihiro Oshima, Seiichi Tagawa, Masakazu Washio

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Keywords: resist, heavy ion beam, focused ion beam (FIB), positive-negative inversion, liner energy transfer (LET)

JOURNAL FREE ACCESS

2010 Volume 23 Issue 3 Pages 399-404

DOI https://doi.org/10.2494/photopolymer.23.399

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Abstract

6 MeV/u ion beams such as Si¹⁴⁺, Ar¹⁸⁺, Kr³⁶⁺ and Xe⁵⁴⁺ and 30 kV Ga⁺ focused ion beam (FIB) were irradiated to a chemically amplified deep-UV resist TDUR-P722 (Tokyo Ohka Kogyo) and electron beam (EB) resists ZEP520A and ZEP7000 (ZEON). Clear patterns were obtained on all resists for high energy ion beams, and it was confirmed that resist sensitivities were correlated with the energy deposition. In contrast, high flux FIB irradiation induced crosslinking reactions of resist polymers, and positive-negative inversion took place.

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