Journal of Photopolymer Science and Technology
Online ISSN : 1349-6336
Print ISSN : 0914-9244
ISSN-L : 0914-9244
Bismuth Resists for EUV Lithography
James PassarelliMiriam SortlandRyan Del ReBrian CardineauChandra SarmaDaniel A. FreedmanRobert L. Brainard
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Keywords: Bismuth, EUV, Photoresist, MORE
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2014 Volume 27 Issue 5 Pages 655-661

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Abstract
We present the synthesis and preliminary lithographic evaluation of Molecular Organometallic Resists for EUV (MORE) that contain post-transition metals. These elements have high EUV optical density so they can utilize a large fraction of the incident photons. We will describe two technical approaches for EUV resist platforms that contain bismuth. Approach 1: Combination of organometallic compounds with photoacid generators. Approach 2: Combination of high-oxidation state metal-center oligomers that utilize carboxylate anions bound to the metal centers.
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© 2014 The Society of Photopolymer Science and Technology (SPST)
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